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INTEGRATED CIRCUITS
DATA SHEET
TEA1067 Low voltage versatile telephone transmission circuit with dialler interface
Product specification File under Integrated Circuits, IC03A June 1990
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
GENERAL DESCRIPTION The TEA1067 is a bipolar integrated circuit performing all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech. The circuit is able to operate down to a DC line voltage of 1.6 V (with reduced performance) to facilitate the use of more telephone sets in parallel. Features * Low DC line voltage; operates down to 1.6 V (excluding polarity guard) * Voltage regulator with adjustable static resistance * Provides supply with limited current for external circuitry * Symmetrical high-impedance inputs (64 k) for dynamic, magnetic or piezoelectric microphones QUICK REFERENCE DATA PARAMETER Line voltage Line current operating range CONDITIONS Iline = 15 mA normal operation TEA1067 TEA1067T with reduced performance Internal supply current power down input LOW input HIGH Supply voltage for peripherals Iline = 15 mA; Ip = 1.4 mA; mute input HIGH Iline = 15 mA; Ip = 0.9 mA; mute input HIGH Voltage gain range microphone amplifier receiving amplifier Line loss compensation gain control range Exchange supply voltage range Exchange feeding bridge resistance range PACKAGE OUTLINES TEA1067: 18-lead DIL; plastic (SOT102). SOT102-1; 1998 Jun 18. TEA1067T: 20-lead mini-pack; plastic (SO20; SOT163A). SOT163-1; 1998 Jun 18. June 1990 2 Rexch 0.4 - Gv Vexch 5.5 36 5.9 - Gv Gv 44 20 - - VCC 2.5 - VCC 2.2 2.4 ICC ICC - - 1 55 Iline Iline Iline 11 11 1 - - - SYMBOL VLN MIN. 3.65 TYP. 3.9
TEA1067
* Asymmetrical high-impedance input (32 k) for electret microphone * DTMF signal input with confidence tone * Mute input for pulse or DTMF dialling * Power down input for pulse dial or register recall * Receiving amplifier for magnetic, dynamic or piezoelectric earpieces * Large gain setting range on microphone and earpiece amplifiers * Line current dependent line loss compensation facility for microphone and earpiece amplifiers * Gain control adaptable to exchange supply * DC line voltage adjustment capability
MAX. 4.15 140 140 11 1.35 82 - - 52 45 6.3 60 1
UNIT V mA mA mA mA A V V dB dB dB V k
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
VCC 15 (17) IR 11 (12)
LN (1)1 (6) 6 GAR QR+ QR-
TEA1067 TEA1067T
- +
+ -
(5) 5 (4) 4
MIC+ MIC-
8 (9) 7 (7)
+ -
dB(1)
+ -
+ - + - +
(2) 2
GAS1
DTMF MUTE PD
13 (15) 14 (16) 12 (14)
dB
(3) 3
-
GAS2
SUPPLY AND REFERENCE AGC CIRCUIT
LOW VOLTAGE CIRCUIT
CURRENT REFERENCE 10 (11) VEE 16 (18) REG 17 (19) 9 (10) STAB (20)18 SLPE
MGR082
AGC
Figures in parenthesis refer to TEA1067T.
Fig.1 Block diagram.
June 1990
3
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PINNING 1 2 3
handbook, halfpage
TEA1067
LN GAS1 GAS2 QR- QR+ GAR MIC- MIC+ STAB
positive line terminal gain adjustment; transmitting amplifier gain adjustment; transmitting amplifier inverting output; receiving amplifier non-inverting output receiving amplifier gain adjustment; receiving amplifier inverting microphone input non-inverting microphone input current stabilizer negative line terminal receiving amplifier input power-down input dual-tone multi-frequency input mute input positive supply decoupling voltage regulator decoupling automatic gain control input slope (DC resistance) adjustment
LN GAS1 GAS2 QR- QR+ GAR MIC- MIC+ STAB
1 2 3 4 5 6 7 8 9
MGR084
18 SLPE 17 AGC 16 REG 15 VCC
4 5 6 7 8 9
TEA1067
14 MUTE 13 DTMF 12 PD 11 IR 10 VEE
10 VEE 11 IR 12 PD 13 DTMF 14 MUTE 15 VCC 16 REG 17 AGC 18 SLPE
Fig.2
Pinning diagram for TEA1067 18-lead DIL version.
1 2 3
handbook, halfpage
LN GAS1 GAS2 QR- QR+ GAR MIC- n.c. MIC+ STAB VEE IR n.c. PD DTMF MUTE VCC REG AGC SLPE
positive line terminal gain adjustment; transmitting amplifier gain adjustment; transmitting amplifier inverting output; receiving amplifier non-inverting output receiving amplifier gain adjustment, receiving amplifier inverting microphone input not connected non-inverting microphone input current stabilizer negative line terminal receiving amplifier input not connected power-down input dual-tone multi-frequency input mute input positive supply decoupling voltage regulator decoupling automatic gain control input slope (DC resistance) adjustment
LN 1 GAS1 2 GAS2 3 QR- 4 QR+ 5
20 SLPE 19 AGC 18 REG 17 VCC 16 MUTE
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
TEA1067T
GAR 6 MIC- 7 n.c. 8 MIC+ 9 STAB 10
MGR083
15 DTMF 14 PD 13 n.c. 12 IR 11 VEE
Fig.3
Pinning diagram for TEA1067T 20-lead mini-pack version.
19 20
June 1990
4
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
FUNCTIONAL DESCRIPTION Supply: VCC, LN, SLPE, REG and STAB Power for the TEA1067 and its peripheral circuits is usually obtained from the telephone line. The IC develops its own supply at VCC and regulates its voltage drop. The supply voltage VCC may also be used to supply external circuits e.g. dialling and control circuits. Decoupling of the supply voltage is performed by a capacitor between VCC and VEE while the internal voltage regulator is decoupled by a capacitor between REG and VEE. The DC current drawn by the device will vary in accordance with varying values of the exchange voltage (Vexch), the feeding bridge resistance (Rexch), and the DC resistance of the telephone line (Rline). The TEA1067 has an internal current stabilizer working at a level determined by a 3.6 k resistor connected between STAB and VEE (see Fig.7). When the line current (Iline) is more than 0.5 mA greater than the sum of the IC supply current (ICC) and the current drawn by the peripheral circuitry connected to VCC (Ip) the excess current is shunted to VEE via LN. The regulated voltage on the line terminal (VLN) can be calculated as: VLN = Vref + ISLPE x R9; or VLN = Vref + [(Iline - ICC - 0.5 x 10-3 A) - Ip] x R9 Where Vref is an internally generated temperature compensated reference voltage of 3.6 V and R9 is an external resistor connected between SLPE and VEE.
TEA1067
In normal use the value of R9 would be 20 . Changing the value of R9 will also affect microphone gain, DTMF gain, gain control characteristics, side-tone level and maximum output swing on LN, and the DC characteristics (especially at the lower voltages). Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip, the static behaviour of the circuit is that of a 3.6 V regulator diode with an internal resistance equal to that of R9. In the audio frequency range the dynamic impedance is largely determined by R1. Fig.4 shows the equivalent impedance of the circuit. At line currents below 9 mA the internal reference voltage is automatically adjusted to a lower value (typically 1.6 V at 1 mA). This means that the operation of more sets in parallel is possible with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. With line currents below 9 mA the circuit has limited sending and receiving levels. The internal reference voltage can be adjusted by means of an external resistor (RVA). This resistor connected between LN and REG will decrease the internal reference voltage, connected between REG and SLPE it will increase the internal reference voltage. Current (Ip) available from VCC for peripheral circuits depends on the external components used. Fig.10 shows this current for VCC > 2.2 V. If MUTE is LOW when the receiving amplifier is driven the available current is further reduced. Current availability can be increased by connecting the supply IC (TEA1081) in parallel with R1, as shown in Fig.17 (c), or by increasing the DC line voltage by means of an external resistor (RVA) connected between REG and SLPE.
June 1990
5
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
LN handbook, halfpage Leq Vref R9 20 VEE Rp = 16.2 k Leq = C3 x R9 x Rp Rp REG C3 4.7 F
MBA454
TEA1067
Dual-tone multi-frequency input (DTMF) When the DTMF input is enabled dialling tones may be sent onto the line. The voltage gain from DTMF to LN is typically 25.5 dB (when R7 = 68 k) and varies with R7 in the same way as the microphone gain. The signalling tones can be heard in the earpiece at a low level (confidence tone). Receiving Amplifier (IR, QR+, QR- and GAR) The receiving amplifier has one input (IR), one non-inverting complementary output (QR+) and an inverting complementary output (QR-). These outputs may be used for single-ended or differential drive depending on the sensitivity and type of earpiece used (see Fig.12). IR to QR + gain is typically 31 dB (when R4 = 100 k), this is sufficient for low-impedance magnetic or dynamic microphones which are suited for single-ended drive. Using both outputs for differential drive gives an additional gain of 6 dB. This feature can be used when the earpiece impedance exceeds 450 (high-impedance dynamic or piezoelectric types). The receiving amplifier gain can be adjusted between 20 and 39 dB with single-ended drive and between 26 and 45 dB with differential drive, to match the sensitivity of the transducer in use. The gain is set with the value of R4 which is connected between GAR and QR+. Overall receive gain between LN and QR+ is calculated by substracting the anti-sidetone network attenuation (32 dB) from the amplifier gain. Two external capacitors C4 and C7, ensure stability. C4 is normally 100 pF and C7 is 10 x the value of C4. The value of C4 may be increased to obtain a first-order low-pass filter. The cut-off frequency will depend on the time constant R4 x C4. The output voltage of the receiving amplifier is specified for continuous-wave drive. The maximum output voltage will be higher under speech conditions where the peak to RMS ratio is higher.
R1 VCC C1 100 F
Fig.4 Equivalent impedance circuit.
Microphone inputs (MIC+ and MIC-) and gain adjustment pins (GAS1 and GAS2) The TEA1067 has symmetrical microphone inputs. Its input impedance is 64 k (2 x 32 k) and its voltage gain is typically 52 dB (when R7 = 68 k, see Fig.14). Dynamic, magnetic, piezoelectric or electret (with built-in FET source followers) microphones can be used. Microphone arrangements are shown in Fig.11. The gain of the microphone amplifier can be adjusted between 44 dB and 52 dB to suit the sensitivity of the transducer in use. The gain is proportional to the value of R7 which is connected between GAS1 and GAS2. Stability is ensured by the external capacitor C6 which is connected between GAS1 and SLPE. The value of C6 is 100 pF but this may be increased to obtain a first-order low-pass filter. The cut-off frequency corresponds to the time constant R7 x C6. Mute input (MUTE) When MUTE is HIGH the DTMF input is enabled and the microphone and receiving amplifier inputs are inhibited. The reverse is true when MUTE is LOW or open-circuit. MUTE switching causes only negligible clicking on the earpiece outputs and line. If the number of parallel sets in use causes a drop in line current to below 6 mA the speech amplifiers remain active independent to the DC level applied to the MUTE input.
June 1990
6
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
Automatic gain control input (AGC) Automatic line loss compensation is achieved by connecting a resistor (R6) between AGC and VEE. The automatic gain control varies the gain of the microphone amplifier and the receiving amplifier in accordance with the DC line current. The control range is 5.9 dB. This corresponds to a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a DC resistance of 176 /km and an average attenuation 1.2 dB/km. Resistor R6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see Fig.13 and Table 1). The ratio of start and stop currents of the AGC curve is independent of the value of R6. If no automatic line loss compensation is required the AGC may be left open-circuit. The amplifiers, in this condition, will give their maximum specified gain. Power-down input (PD) During pulse dialling or register recall (timed loop break) the telephone line is interrupted. During these interruptions the telephone line provides no power for the transmission circuit or circuits supplied by VCC. The charge held on C1 will bridge these gaps. This bridging is made easier by a HIGH level on the PD input which reduces the typical supply current from 1 mA to 55 A and switches off the voltage regulator preventing discharge through LN. When PD is HIGH the capacitor at REG is disconnected with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. When this facility is not required PD may be left open-circuit. Side-tone suppression
TEA1067
The anti-sidetone network, R1//Zline, R2, R3, R9 and Zbal, (see Fig.5) suppresses transmitted signal in the earpiece. Compensation is maximum when the following conditions are fulfilled: (a) R9 x R2 = R1 (R3 + [R8//Zbal]); (b) (Zbal / [Zbal + R8]) = (Zline / [Zline + R1]) If fixed values are chosen for R1, R2, R3, and R9 then condition (a) will always be fulfilled when R8//Zbal << R3. To obtain optimum side-tone suppression condition (b) has to be fulfilled resulting in: Zbal = (R8/R1) Zline = k.Zline where k is a scale factor; k = (R8/R1) The scale factor (k), dependent on the value of R8, is chosen to meet the following criteria: (a) Compatibility with a standard capacitor from the E6 or E12 range for Zbal (b) Zbal//R8 << R3 to fulfil condition (a) and thus ensuring correct anti-sidetone bridge operation (c) Zbal + R8 >> R9 to avoid influencing the transmitter gain In practice Zline varies considerably with the line type and length. The value chosen for Zbal should therefore be for an average line length thus giving optimum setting for short or long lines.
June 1990
7
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
Example The line balance impedance (Zbal) at which the optimum suppression is present can be calculated by: suppose Zline = 210 + (1265 //140 nF), representing a 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 (176 /km; 38 nF/km). When k = 0.64 then R8 = 390 ; Zbal = 130 + (820 //220 nF).
TEA1067
The anti-sidetone network for the TEA1060 family shown in Fig.5 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. Fig.6 shows a conventional Wheatstone bridge anti-sidetone circuit that can be used as an alternative. Both bridge types can be used with either resistive or complex set impedances.
handbook, full pagewidth
LN
Zline
R1
R2
VEE
im R3 R9 R8 SLPE Zbal
IR Rt
MSA500
Fig.5 Equivalent circuit of TEA1060 anti-sidetone bridge.
handbook, full pagewidth
LN
Zline
R1
Zbal
VEE
im
IR Rt
R9
R8
RA
SLPE
MSA501
Fig.6 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
More information can be found in the designer guide; 9398 341 10011
June 1990
8
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER Positive continuous line voltage Repetitive line voltage during switch-on line interruption Repetitive peak line voltage for a 1 ms pulse per 5 s R9 = 20 ; R10 = 13 (Fig.16) Line current TEA1067 (note 1) Line current TEA1067T (note 1) Voltage on all other pins Total power dissipation (note 2) TEA1067 TEA1067T Storage temperature range Operating ambient temperature range Junction temperature Notes 1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 7 and 8 to determine the current as a function of the required voltage and the temperature. 2. Calculated for the maximum ambient temperature specified Tamb = 75 C and a maximum junction temperature of 125 C. THERMAL RESISTANCE From junction to ambient in free air TEA1067 TEA1067T mounted on glass epoxy board 41 x 19 x 1.5 mm Rth j-a Rth j-a typ. typ. R9 = 20 Ptot Ptot Tstg Tamb Tj - - -40 -25 - 769 550 + 125 + 75 + 125 R9 = 20 R9 = 20 VLN Iline Iline Vi -Vi - - - - - 28 140 140 VLN - 13.2 CONDITIONS SYMBOL VLN - MIN.
TEA1067
MAX. 12 V V
UNIT
V mA mA V V mW mW C C C
VCC + 0.7 0.7
65 90
K/W K/W
June 1990
9
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, halfpage I
160 LN (mA) 140
MBH133
(1)
120
(2)
100
(3)
80
(4)
60
Tamb
40 2 4 6 8 10 12 VLN-VSLPE (V)
Ptot 1231 mW 1077 mW 923 mW 769 mW
(1) (2) (3) (4)
45 C 55 C 65 C 75 C
Fig.7 TEA1067 safe operating area.
handbook, halfpage I
150 LN (mA) 130
MSA546
110
90
(1) (2)
70
(3)
50
(4)
30 2 4 6 8 10 12 VLN-VSLPE (V)
Tamb (1) (2) (3) (4) Fig.8 TEA1067T safe operating area. 45 C 55 C 65 C 75 C
Ptot 888 mW 777 mW 666 mW 555 mW
June 1990
10
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
CHARACTERISTICS Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 C; unless otherwise specified PARAMETER Supply; LN and VCC Voltage drop over circuit, between LN and VEE microphone inputs open Iline = 1 mA Iline = 4 mA Iline = 7 mA Iline = 11 mA Iline = 15 mA Iline = 100 mA Iline = 140 mA Variation with temperature Voltage drop over circuit, between LN and VEE with external resistor RVA Iline = 15 mA; RVA (LN to REG) = 68 k Iline = 15 mA; RVA (REG to SLPE) = 39 k Supply current Supply current Supply voltage available for peripheral circuitry Iline = 15 mA; MUTE = HIGH Ip = 1.4 mA Ip = 0 mA Microphone inputs MIC+ and MIC- Input impedance (differential) between MIC- and MIC+ Input impedance (single-ended) MIC- or MIC+ to VEE Common mode rejection ratio Voltage gain MIC+/MIC- to LN Iline = 15 mA; R7 = 68 k Gv 51 52 53 Zi kCMR 25.5 - 32 82 Zi 51 64 77 VCC VCC 2.2 2.95 2.4 3.2 - - PD = LOW; VCC = 2.8 V PD = HIGH; VCC = 2.8 V ICC - 55 82 ICC - 1.0 4.2 4.5 4.8 3.1 3.4 3.7 Iline = 15 mA VLN VLN VLN VLN VLN VLN VLN VLN/T - 1.75 2.25 3.55 3.65 4.9 - -3 1.6 2.0 2.8 3.8 3.9 5.6 - -1 - CONDITION SYMBOL MIN. TYP.
TEA1067
MAX.
UNIT
V V V V V V V mV/K
2.25 3.35 4.05 4.15 6.5 7.5 1
V
V mA A
1.35
V V
k k dB
38.5 -
dB
June 1990
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PARAMETER Gain variation with frequency at f = 300 Hz and f = 3400 Hz Gain variation with temperature at -25 C and + 75 C w.r.t. 25 C without R6; Iline = 50 mA Dual-tone multi-frequency input DTMF Input impedance Voltage gain from DTMF to LN Gain variation with frequency at f = 300 Hz and f = 3400 Hz Gain variation with temperature at -25 C and +75 C Gain adjustment GAS1 and GAS2 Gain variation of the transmitting amplifier by varying R7 between GAS1 and GAS2 Sending amplifier output LN Output voltage Iline = 15 mA THD = 2% THD = 10% Iline = 4 mA; THD = 10% Iline = 7 mA; THD = 10% Noise output voltage Iline = 15 mA; R7 = 68 k; 200 between MIC- and MIC+; psophometrically weighted (P53 curve) Receiving amplifier input IR Input impedance June 1990 Zi 12 17 21 25 Vno(rms) - -72 - VLN(rms) - 1.4 - VLN(rms) - 0.8 - VLN(rms) VLN(rms) - 1.9 1.9 2.2 - - Gv -8 - 0 w.r.t. 25 C Iline = 50 mA GvT - 0.2 - w.r.t. 800 Hz Gvf -0.5 0.2 Iline = 15 mA; R7 = 68 k Gv 24.5 25.5 Zi 16.8 20.7 GvT - 0.2 - w.r.t 800 Hz Gvf -0.5 0.2 CONDITION SYMBOL MIN. TYP.
TEA1067
MAX.
UNIT
+0.5
dB
dB
24.6 26.5 +0.5
k dB dB
dB
dB
V V V V
dBmp
k
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PARAMETER Receiving amplifier outputs QR+ and QR- Output impedance (single-ended) Voltage gain from IR to QR+ or QR- single-ended differential Gain variation with frequency at f = 300 Hz and f = 3400 Hz Gain variation with temperature at -25 C and +75 C w.r.t. 25 C without R6; Iline = 50 mA Output voltage sinewave drive Iline = 15 mA; Ip = 0 mA; THD = 2% R4 = 100 k single-ended differential RL = 150 RL = 450 f = 3400 Hz; series R = 100 ; CL = 47 nF Output voltage THD = 10%; RL = 150 R4 = 100 k Iline = 4 mA Iline = 7 mA Noise output voltage Iline = 15 mA; R4 = 100 k; IR open-circuit psophometrically weighted; (P53 curve) single-ended differential RL = 300 RL = 600 Vno(rms) Vno(rms) - - 50 100 - - Vo(rms) Vo(rms) - - 15 130 - - Vo(rms) 0.65 0.80 - Vo(rms) Vo(rms) 0.25 0.45 0.29 0.55 - - GvT - 0.2 - w.r.t. 800 Hz Gvf -0.5 -0.2 0 Iline = 15 mA R4 = 100 k RL (from QR+ or QR-) = 300 RL (from QR+ or QR-) = 600 Gv 36 37 38 Gv 30 31 32 Zo - 4 - CONDITION SYMBOL MIN. TYP.
TEA1067
MAX.
UNIT
dB dB
dB
dB
V V
V
mV mV
V V
June 1990
13
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PARAMETER Gain adjustment GAR Gain variation of receiving amplifier achievable by varying R4 between GAR and QR Mute input Input voltage HIGH Input voltage LOW Input current Gain reduction MIC+ or MIC- to LN Voltage gain from DTMF to QR+ or QR- MUTE = HIGH; R4 = 100 k; single-ended; RL = 300 Power-down input PD Input voltage HIGH Input voltage LOW Input current Automatic gain control input AGC Controlling the gain from IR to QR+/QR- and the gain from MIC+/MIC- to LN; R6 between AGC and VEE Gain control range Highest line current for maximum gain Minimum line current for minimum gain Reduction of gain between Iline = 15 mA and Iline = 35 mA Gv -1.0 -1.5 Iline - 61 - Iline - 23 - R6 = 110 k Iline = 70 mA Gv -5.5 -5.9 VIH VIL IPD 1.5 - - - - 5 Gv -21 -19 -17 MUTE = HIGH Gv - 70 - VIH VIL IMUTE 1.5 - - - - 8 Gv -11 - +8 CONDITION SYMBOL MIN. TYP.
TEA1067
MAX.
UNIT
dB
VCC 0.3 15
V V A dB
dB
VCC 0.3 10
V V A
-6.3
dB mA mA
-2.0
dB
June 1990
14
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
Rline
Iline ISLPE + 0.5 mA LN
R1 ICC Ip VCC 0.5 mA C1 STAB ISLPE SLPE VEE peripheral circuits
Rexch
TEA1067
DC AC
Vexch
REG
C3
R5
R9
MBH123
Fig.9 Supply arrangement.
MGR085
handbook, halfpage
2 a IP (mA)
b
1
0 0 1 2 3 VCC (V) 4
Curve (a) is valid when the receiving amplifier is not driven or when MUTE = HIGH, curve (b) is valid when MUTE = LOW and the receiving amplifier is driven; Vo(rms) = 150 mV, RL = 150 asymmetrical. The supply possibilities can be increased simply by setting the voltage drop over the circuit VLN to a higher value by means of resistor RVA connected between REG and SLPE.
(a) Ip = 1.8 mA (b) Ip = 1.35 mA Iline = 15 mA at VLN = 3.9 V R1 = 620 and R9 = 20 .
Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC 2.2 V.
June 1990
15
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
MIC+
(1)
MIC-
VCC
MIC+
MIC-
MIC+
VEE
MIC-
MGR086
(a)
(b)
(c)
(a) Magnetic or dynamic microphone. The resistor marked (1) may be connected to decrease the terminating impedance. (b) Electret microphone. (c) Piezoelectric microphone.
Fig.11 Alternative microphone arrangements.
handbook, full pagewidth
(1)
(2)
QR+ QR- VEE
QR+
QR+
QR+
QR-
QR-
QR-
MGR087
(a)
(b)
(c)
(d)
(a) Dynamic earpiece with less than 450 impedance. (b) Dynamic earpiece with more than 450 impedance. (c) Magnetic earpiece with more than 450 impedance. The resistor marked (1) may be connected to prevent distortion (inductive load). (d) Piezoelectric earpiece. The resistor marked (2) is required to increase the phase margin (capacitive load).
Fig.12 Alternative receiver arrangements.
June 1990
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
0 Gv (dB) -2
R6 =
MSA507
R9 = 20 -4 78.7 k 110 k 140 k
-6
0
20
40
60
80
100
120
140 Iline (mA)
Fig.13 Variation of gain with line current, with R6 as a parameter.
Table 1
Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply voltage (Vexch) and exchange feeding bridge resistance (Rexch); R9 = 20 . Rexch () 400 600 78.7 110 X 800 R6 (k) X 93.1 120 1000 X 82 102
Vexch (V)
36 48 60
100 140 X
June 1990
17
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
handbook, full pagewidth
TEA1067
R1 620 VCC IR MIC+ Vi MIC- QR+ R4 100 k GAR C7 1 nF GAS1 MUTE 10 F PD VEE Vi REG C3 4.7 F AGC STAB R5 3.6 k R7 68 k GAS2 SLPE C6 100 pF C4 100 pF LN QR- RL 600 100 F
Iline
Vo
TEA1067
C1 100 F DTMF
1 to 140 mA
R6
R9 20
MGR088
Voltage gain is defined as: Gv = 20 log Vo/Vi. For measuring the gain from MIC+ and MIC- the MUTE input should be LOW or open, for measuring the DTMF input MUTE should be HIGH. Inputs not under test should be open.
Fig.14 Test circuit for defining voltage gain of MIC+, MIC- and DTMF inputs.
handbook, full pagewidth
R1 620
Iline
100 F VCC IR MIC+ QR+ MIC- R4 100 k GAR C7 1 nF GAS1 MUTE R7 PD VEE REG C3 4.7 F Voltage gain is defined as: Gv = 20 log Vo/Vi. AGC STAB R5 3.6 k GAS2 SLPE C6 100 pF C4 100 pF 1 to 140 mA LN QR- ZL Vo 10 F 600
10 F Vi
TEA1067
C1 100 F DTMF
R6
R9 20
MGR089
Fig.15 Test circuit for defining voltage gain of the receiving amplifier.
June 1990
18
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
APPLICATION INFORMATION
TEA1067
handbook, full pagewidth
R1 620 R10 13 R2 130 k C5 IR 100 nF QR- R11 DTMF LN VCC C1 100 F
BAS11 (2x)
BZX79C12
+
telephone BZW14 line (2x) R3 3.92 k
QR+ R4 C4 100 pF GAR C7 1 nF MIC+ RVA MIC- SLPE R8 390 Zbal R9 20 R7 C6 100 pF C3 4.7 F R6 GAS1 GAS2 REG AGC STAB
TEA1067
MUTE
from dial and control circuits
PD
-
VEE
R5 3.6 k
MGR090
The bridge to the left, the zener diode and R10 limit the current into the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement. The DC line voltage can be set to a higher value by the resistor RVA (REG to SLPE).
Fig.16 Typical application of the TEA1067, shown here with a piezoelectric earpiece and DTMF dialling.
June 1990
19
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
LN cradle contact
VCC DTMF
VDD DTMF M FL VSS
TEA1067 MUTE
PD VEE
PCD3310
telephone line BST76
(a)
LN cradle contact
VCC DTMF
VDD
TEA1067
VEE
MUTE PD
M DP VSS
PCD3320 FAMILY
telephone line BST76
(b)
TEA1081
LN cradle contact
VCC DTMF
VDD
TEA1067
VEE
MUTE PD
M DP/FL VSS
PCD3343
telephone line BST76 I2C-bus DTMF
(c)
PCD3312
MGR091
(a) DTMF-Pulse set with CMOS dialling circuit PCD3310. The dashed lines show an optional flash (register recall by timed loop break). (b) Pulse dial set with one of the PCD3320 family of CMOS interrupted current-loop dialling circuits. (c) Dual-standard (pulse and DTMF) feature phone with the PCD3343 CMOS controller and the PCD3312 CMOS DTMF generator with I2C-bus. Supply is provided by the TEA1081 supply circuit.
Fig.17 Typical applications of the TEA1067 (simplified).
June 1990
20
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PACKAGE OUTLINES DIP18: plastic dual in-line package; 18 leads (300 mil)
TEA1067
SOT102-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 18 10 b2 MH wM (e 1)
pin 1 index E
1
9
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.020 A2 max. 3.7 0.15 b 1.40 1.14 0.055 0.044 b1 0.53 0.38 0.021 0.015 b2 1.40 1.14 0.055 0.044 c 0.32 0.23 0.013 0.009 D (1) 21.8 21.4 0.86 0.84 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.9 3.4 0.15 0.13 ME 8.25 7.80 0.32 0.31 MH 9.5 8.3 0.37 0.33 w 0.254 0.01 Z (1) max. 0.85 0.033
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT102-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-10-14 95-01-23
June 1990
21
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1067
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
June 1990
22
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA1067
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
June 1990
23
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1067
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
June 1990
24
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
NOTES
TEA1067
June 1990
25
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
NOTES
TEA1067
June 1990
26
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
NOTES
TEA1067
June 1990
27
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/00/02/pp28
Date of release: June 1990
Document order number:
9397 750 nnnnn

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